H5AN8G4NCJR-XXC vs K4B4G1646D-BYK00 Perbandingan
Perbandingan bersamaan detil H5AN8G4NCJR-xxC dari SK hynix dan K4B4G1646D-BYK00 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5AN8G4NCJR-xxC | K4B4G1646D-BYK00 |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8Gb | 4 Gb |
| Organisasi | x4 (H5AN8G4NCJR) | 256M x 16 |
| Tegangan Pemuat | 1.2V | 1.35 V (also operates at 1.5 V) |
| Laju Data | [DATA_NEEDED: speed grade from xxC suffix] | 1600 Mbps |
| Paket | FBGA | 96-ball TFBGA |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Tipe Mounting | Surface Mount | — |
| Prefetch | 8-bit | — |
| Burst Length | 8 (BL8) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Number of Terminals | — | 96 |
| Latensi CAS | — | Programmable |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |