H5AN8G6NAFR-UHC vs H5AN8G6NCJR-VKC Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-UHC dari SK hynix dan H5AN8G6NCJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | — |
| Tegangan Pemuat | 1.2 V | — |
| Laju Data | 2400 MT/s | 2666 Mbps (MT/s) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Paket | 96-ball FBGA (TFBGA) | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | 0C to +95C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Ukuran Memori | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Antarmuka | — | Parallel |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Status Lingkungan Hidup | — | Active |