H5AN8G6NAFR-UHC vs H5AN8G6NCJR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-UHC sa pamamagitan ng SK hynix at H5AN8G6NCJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasyon | 512M x 16 | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Rate ng Data | 2400 MT/s | 2666 Mbps (MT/s) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Packhaging | 96-ball FBGA (TFBGA) | FBGA-96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | 0C to +95C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Laki ng Memory | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Interface | — | Parallel |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Katayuan ng Lifecycle | — | Active |