H5AN8G6NDJR-UHC vs H5AN8G6NCJR-UHC Perbandingan

Perbandingan bersamaan detil H5AN8G6NDJR-UHC dari SK hynix dan H5AN8G6NCJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN8G6NDJR-UHC H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN8G6NDJR-UHC H5AN8G6NCJR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 512M x 16 512M x 16
Speed Grade 3200 Mbps (PC4-25600) DDR4-2400 (2400 Mbps/pin)
Supply Voltage (VDD) 1.2 V —
Supply Voltage (VDDQ) 1.2 V —
Number of Terminals 96 —
Paket FBGA-96 (13x7.5 mm) FBGA-96 (96-ball)
Package Shape RECTANGULAR —
JESD-30 Code R-PBGA-B96 —
Maximum Operating Temperature 85 °C —
Minimum Operating Temperature 0 °C —
RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes —
Additional Features Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling —
Tegangan Pemuat — 1.2 V
Tipe Mounting — Surface Mount (BGA)
Suhu Kerja — 0C to +95C
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
CRC Function — Yes
Dynamic On-Die Termination — Yes
ZQ Calibration — Yes
Lead-Free / Halogen-Free — Yes (per family datasheet)
Status RoHS — [DATA_NEEDED: RoHS certification statement]

Spek dan Sumber

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