H5ANAG6NBJR-UHC vs H5AN4G6NBJR-RDC Perbandingan
Perbandingan bersamaan detil H5ANAG6NBJR-UHC dari SK hynix dan H5AN4G6NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NBJR-UHC | H5AN4G6NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Antarmuka | DDR4 (CMOS) | CMOS, fully synchronous |
| Paket | PBGA96 / FBGA-96 (TFBGA) | — |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| Suhu Kerja | -40C to +95C | — |
| Refresh | Auto / Self Refresh | — |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | Yes |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | Yes |
| Write Leveling | Supported | Yes |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| Status RoHS | RoHS Compliant | — |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Tegangan Pemuat | — | 1.2 V |
| Package Code | — | TFBGA (FBGA-96) |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Number of Terminals | — | 96 |
| Tipe Mounting | — | Surface Mount |
| Temperature Grade | — | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| CRC Function | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |