H5ANAG6NCR-RDC vs H5ANAG6NCR-VKC Perbandingan
Perbandingan bersamaan detil H5ANAG6NCR-RDC dari SK hynix dan H5ANAG6NCR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NCR-RDC | H5ANAG6NCR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 16 Gb (2 GB) | — |
| Organisasi | 1G x 16 | 2G x 8 |
| Laju Data | 3200 Mbps (PC4-25600 class) | [DATA_NEEDED: verified speed grade in Mbps] |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | 96-ball FBGA | 96-ball FBGA |
| Package Body | Rectangular, 8 mm width | — |
| Maximum Standby Current | 0.074 A | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Number of Terminals (Balls) | 96 | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance statement] |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: temperature suffix range confirmation] |
| Refresh Interval | [DATA_NEEDED: Refresh Interval] | — |
| Memory Density | — | 16 Gbit |
| Antarmuka | — | DDR4 (Double Data Rate 4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Banks | — | 16 banks (4 bank groups x 4) |
| Burst Length | — | BL8 |
| Refresh Mode | — | 1x / 2x / 4X per JEDEC DDR4 |
| Technology | — | CMOS |
| Application | — | Main memory (PC / server / embedded) |