H5ANAG6NCR-RDC vs H5ANAG6NCR-VKC 比較

詳細並排比較 H5ANAG6NCR-RDC 由 SK hynix 與 H5ANAG6NCR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG6NCR-RDC H5ANAG6NCR-RDC - 16Gb DDR4 SDRAM 3200Mbps x16 | SK Hynix

H5ANAG6NCR-RDC - 16Gb DDR4 SDRAM 3200Mbps x16 | SK Hynix

H5ANAG6NCR-RDC ✓ 啟用中
SK hynix
H5ANAG6NCR-VKC H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC ✓ 啟用中

規格比較

參數 H5ANAG6NCR-RDC H5ANAG6NCR-VKC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 16 Gb (2 GB) —
組織 1G x 16 2G x 8
資料速率 3200 Mbps (PC4-25600 class) [DATA_NEEDED: verified speed grade in Mbps]
Supply Voltage (VDD) 1.2 V —
封裝 96-ball FBGA 96-ball FBGA
Package Body Rectangular, 8 mm width —
Maximum Standby Current 0.074 A —
安裝類型 Surface Mount Surface Mount
Number of Terminals (Balls) 96 —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Function Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
RoHS 狀態 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS compliance statement]
工作溫度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: temperature suffix range confirmation]
Refresh Interval [DATA_NEEDED: Refresh Interval] —
Memory Density — 16 Gbit
介面 — DDR4 (Double Data Rate 4)
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Banks — 16 banks (4 bank groups x 4)
Burst Length — BL8
Refresh Mode — 1x / 2x / 4X per JEDEC DDR4
Technology — CMOS
Application — Main memory (PC / server / embedded)

資料表與資源

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