H5ANAG8NBJR-VKC vs H5ANAG8NBJR-PBC Perbandingan
Perbandingan bersamaan detil H5ANAG8NBJR-VKC dari SK hynix dan H5ANAG8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG8NBJR-VKC | H5ANAG8NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) |
| Organisasi | 2G x 8 | x8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| Tegangan Pemuat | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Paket | FBGA-78 | FBGA-78 (7.5 mm x 11 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant, Lead-Free and Halogen-Free | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| Tipe Antarmuka | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |