H5TC4G63AFR-PBR vs H5TC4G63MFR-PBA Perbandingan

Perbandingan bersamaan detil H5TC4G63AFR-PBR dari SK hynix dan H5TC4G63MFR-PBA dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ Aktif
SK hynix
H5TC4G63MFR-PBA H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5TC4G63AFR-PBR H5TC4G63MFR-PBA
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $5,91 —
Tipe Memori DDR3L SDRAM DDR3L SDRAM
Organisasi 256M x 16 256M x 16
Total Capacity 4Gb —
Tegangan Pemuat 1.35V (1.5V compatible) —
Laju Data 1600 Mbps (PC3L-12800) 1866 Mbps (PC3L-14900)
Latensi CAS 11 —
tRCD/tRP 11 —
Clock Frequency 800 MHz —
tCK 1.25 ns —
tRCD 13.125 ns —
Burst Length 8 (BL8) with burst chop (BC4) BL8, BL4 (with burst chop)
Number of Banks 8 8
Refresh Interval 7.8us at 85C, 3.9us at 95C —
Paket 96-ball FBGA (PBGA96) 96-ball FBGA
Package Dimensions 13.5mm x 9.0mm —
Ball Pitch 0.8mm —
I/O Interface SSTL-15 —
Suhu Kerja 0C to +95C —
RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes —
Density — 4 Gb
Supply Voltage (VDD/VDDQ) — 1.35V (+0.100V/-0.067V)
CAS Latency (CL) — Programmable
CAS Write Latency (CWL) — Programmable
Additive Latency — Programmable
On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Temperature-Compensated Self-Refresh — Yes
Process Technology — 30nm-class
RoHS Compliant — Yes (Lead-Free & Halogen-Free)

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