H5TC4G63AFR-PBR vs H5TC4G63MFR-PBA Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBR by SK hynix and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ Active
SK hynix
H5TC4G63MFR-PBA H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA ✓ Active

Specification Comparison

Parameter H5TC4G63AFR-PBR H5TC4G63MFR-PBA
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) $5.91 —
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Capacity 4Gb —
Supply Voltage 1.35V (1.5V compatible) —
Data Rate 1600 Mbps (PC3L-12800) 1866 Mbps (PC3L-14900)
CAS Latency 11 —
tRCD/tRP 11 —
Clock Frequency 800 MHz —
tCK 1.25 ns —
tRCD 13.125 ns —
Burst Length 8 (BL8) with burst chop (BC4) BL8, BL4 (with burst chop)
Number of Banks 8 8
Refresh Interval 7.8us at 85C, 3.9us at 95C —
Package 96-ball FBGA (PBGA96) 96-ball FBGA
Package Dimensions 13.5mm x 9.0mm —
Ball Pitch 0.8mm —
I/O Interface SSTL-15 —
Operating Temperature 0C to +95C —
RoHS Compliant —
Lead-Free Yes —
Halogen Free Yes —
Density — 4 Gb
Supply Voltage (VDD/VDDQ) — 1.35V (+0.100V/-0.067V)
CAS Latency (CL) — Programmable
CAS Write Latency (CWL) — Programmable
Additive Latency — Programmable
On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Temperature-Compensated Self-Refresh — Yes
Process Technology — 30nm-class
RoHS Compliant — Yes (Lead-Free & Halogen-Free)

Datasheets & Resources

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