IAUA180N04S5N012AUMA1 vs IAUCN04S7N027GATMA1 Perbandingan

Perbandingan bersamaan detil IAUA180N04S5N012AUMA1 dari Infineon dan IAUCN04S7N027GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUA180N04S5N012AUMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUA180N04S5N012AUMA1 —
Series OptiMOS-5 40 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 180 A (Tc) —
Maximum Power Dissipation (PD) 125 W (Tc) —
R_DS(on) (max) 1.2 mΩ at 10 V VGS —
Gate-Source Voltage (VGS) max ±20 V —
Paket PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C (Tj) [DATA_NEEDED: operating temperature range]
Technology OptiMOS-5 Trench —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Paket / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Level MSL — [DATA_NEEDED: MSL]
Substrate Compatibility — IMS substrates and legacy FR-4

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