IAUC100N10S5L054ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N10S5L054ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUC100N10S5L054ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IAUC automotive family) | Automotive OptiMOS 7 |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55°C to +175°C (TJ) |
| Paket | PG-TDSON-8-34 (surface mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | Automotive Grade (per Infineon datasheet header) |
| Technology | OptiMOS 5 trench | OptiMOS 7 trench MOSFET |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |