IAUC100N10S5L054ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5L054ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUC100N10S5L054ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IAUC automotive family) | Automotive OptiMOS 7 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55°C to +175°C (TJ) |
| Kemasan | PG-TDSON-8-34 (surface mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | Automotive Grade (per Infineon datasheet header) |
| Technology | OptiMOS 5 trench | OptiMOS 7 trench MOSFET |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |