IAUC120N04S6L012ATMA1 vs IAUZN04S7L030ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N04S6L012ATMA1 dari Infineon dan IAUZN04S7L030ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC120N04S6L012ATMA1 IAUZN04S7L030ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 40V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC 120 A —
Pulsed Drain Current (IDM) 480 A —
On-State Resistance (RDS(on)) at 10V VGS 1.2 mΩ (typ) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at 20V VGS] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC 115 W —
Rentang Suhu Kerja -55 °C to +175 °C (junction) —
Paket PG-TDSON-8 (TDSON-8, surface mount with exposed pad) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (Automotive OptiMOS)
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant —
Delivery Form Tape & Reel —
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant

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