IAUC120N06S5N011ATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5N011ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5N011ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 120 A (Tc=25°C, Vgs=10V) —
Pulsed Drain Current (Idm) 310 A (Tj) —
On-Resistance Rds(on) max 1.1 mΩ at Vgs=10 V —
Gate-Source Voltage (Vgs) max ±20 V —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total value] —
Power Dissipation (Pd) 188 W (Tc=25°C) —
Rentang Suhu Kerja -55°C to +175°C (Tj) -55 °C to +175 °C (TJ)
Paket PG-TDSON-8-53 (SSO8 5x6 mm) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant Compliant (per Infineon product page)
Level MSL 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)

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IAUC120N06S5N011ATMA1

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