IAUC28N08S5L230ATMA1 vs IAUCN10S7N021ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC28N08S5L230ATMA1 dari Infineon dan IAUCN10S7N021ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC28N08S5L230ATMA1 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-5 —
FET Type N-Channel N-Channel
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) 28 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 23 mΩ (typ) —
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) 2.5 V —
Gate Charge (Q<sub>g</sub>, typ) [DATA_NEEDED: total gate charge] —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 38 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8-33 (5x6 mm SSO8) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-5 Power MOSFET OptiMOS™ 7 (trench MOSFET)
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 175 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Qualification — AEC-Q101 (Automotive)

Spek dan Sumber

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