IAUC41N06S5L100ATMA1 vs ISC015N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5L100ATMA1 dari Infineon dan ISC015N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5L100ATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 3.4 V (typ)
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Rentang Suhu Kerja -55C to +175C -55 C to +175 C (junction, per OptiMOS 5)
Paket PG-TDSON-8-33 (TDSON-8, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Level MSL [DATA_NEEDED: MSL rating] 1 (per Infineon SuperSO8 family)
Automotive Qualified Yes (AEC-Q101 automotive grade) —
Status RoHS Compliant Compliant
Interconnect Copper clip (low-inductance) —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Paket / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jumlah Pin — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Spek dan Sumber

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