IAUC60N04S6L030HATMA1 vs IAUC41N06S5N102ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC60N04S6L030HATMA1 dari Infineon dan IAUC41N06S5N102ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC60N04S6L030HATMA1 IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-33 (SSO8) Surface Mount
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101 (per Infineon automotive MOSFET family)
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Part Family — OptiMOS 5 Power-Transistor
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Rentang Suhu Kerja — -55C to +175C (junction)
Channel Polarity — N-Channel (single)

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