IAUC60N04S6N044ATMA1 vs IAUZN04S7L030ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC60N04S6N044ATMA1 dari Infineon dan IAUZN04S7L030ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC60N04S6N044ATMA1 IAUZN04S7L030ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS-6 N-channel trench MOSFET —
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8 (5x6 mm) with exposed pad PG-TSDSON-8-44 (S3O8) 3x3 mm²
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 qualified (IAUC prefix) AEC-Q101 (Automotive OptiMOS)
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant

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