IAUC60N04S6N044ATMA1 vs IAUZN04S7L030ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveInfineon
IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.36 |
| Technology | OptiMOS-6 N-channel trench MOSFET | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 60 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: pulsed/current derated value] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΞ© | β |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | β |
| Power Dissipation (P_D) at Tc=25Β°C | 42 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TSDSON-8-44 (S3O8) 3x3 mmΒ² |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 (Automotive OptiMOS) |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 60 A |
| Pulsed Drain Current (IDM, Tj) | β | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | β | 3.05 mΞ© |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25Β°C) | β | 58 W |
| Operating Junction Temperature (Tj) | β | -55C to +175C |
| Technology Family | β | OptiMOS-7 |
| Channel Type | β | N-Channel |
| RoHS Compliance | β | Compliant |