IAUC60N04S6N044ATMA1 vs IAUZN04S7L030ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N04S6N044ATMA1 sa pamamagitan ng Infineon at IAUZN04S7L030ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ NakahandaInfineon
IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC60N04S6N044ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS-6 N-channel trench MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | AEC-Q101 (Automotive OptiMOS) |
| Tindminan RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |
| RoHS Compliance | — | Compliant |