IAUCN04S7L006ATMA1 vs IAUCN08S7N024ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUCN08S7N024ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L006ATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C (typical automotive)
Paket PG-TDSON-8-43 PG-TDSON-8-34 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-7 trench OptiMOS 7 trench
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant —
Jumlah Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7 (80 V)
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Dissipasi Listrik (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Automotive Qualification — AEC-Q101
RoHS Compliance — Compliant
Level MSL — [DATA_NEEDED: MSL rating]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Spek dan Sumber

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