IAUCN04S7L006ATMA1 vs IAUCN08S7N024ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L006ATMA1 disebabkan oleh Infineon dan IAUCN08S7N024ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7L006ATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C (typical automotive)
Kemasan PG-TDSON-8-43 PG-TDSON-8-34 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS-7 trench OptiMOS 7 trench
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant —
Kiraan Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7 (80 V)
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Pembuangan Kuasa (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Automotive Qualification — AEC-Q101
RoHS Compliance — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

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