IAUCN04S7L006ATMA1 vs IAUZN04S7L030ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUZN04S7L030ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7L006ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-43 | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Status RoHS | Compliant | — |
| Jumlah Pin | 8 | — |
| Packaging | Tape and Reel (ATMA1) | — |
| Polarity | Single N-Channel | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 (Automotive OptiMOS) |
| RoHS Compliance | — | Compliant |
| Level MSL | — | [DATA_NEEDED: MSL rating] |