IAUCN04S7N006ATMA1 vs IAUCN04S7L006ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N006ATMA1 dari Infineon dan IAUCN04S7L006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N006ATMA1 IAUCN04S7L006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 175 A —
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 5 (trench) OptiMOS-7 trench
Paket PG-TDSON-8-43 PG-TDSON-8-43
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C -55 °C to +175 °C
Junction Temperature Max 175 C —
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] —
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] —
Automotive Qualification AEC-Q101 —
Lead-Free / RoHS Yes (compliant) —
Level MSL [DATA_NEEDED: MSL rating] —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max — 0.6 mΩ at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Automotive Qualified — Yes (AEC-Q101)
Status RoHS — Compliant
Jumlah Pin — 8
Packaging — Tape and Reel (ATMA1)
Polarity — Single N-Channel

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