IAUCN04S7N006ATMA1 vs IAUCN04S7L006ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N006ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N006ATMA1
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N006ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.38 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 175 A | β |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Technology | OptiMOS 5 (trench) | OptiMOS-7 trench |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Junction Temperature Max | 175 C | β |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | β |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | β |
| Automotive Qualification | AEC-Q101 | β |
| Lead-Free / RoHS | Yes (compliant) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 175 A |
| R_DS(on) Max | β | 0.6 mΞ© at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | β | [DATA_NEEDED: total gate charge] |
| Automotive Qualified | β | Yes (AEC-Q101) |
| RoHS Status | β | Compliant |
| Pin Count | β | 8 |
| Packaging | β | Tape and Reel (ATMA1) |
| Polarity | β | Single N-Channel |