IAUCN04S7N009ATMA1 vs IAUCN04S6N009TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N009ATMA1 dari Infineon dan IAUCN04S6N009TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N009ATMA1 IAUCN04S6N009TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 6 trench MOSFET
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max @ V_GS = 10 V 0.96 mΩ —
Gate Drive Voltage (V_GS) 10 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-LHDSO-10-2 (SSO10T)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C —
Qualification AEC-Q101 (Automotive) —
Level MSL 1 —
Status RoHS Compliant —
Configuration Single N-Channel —
Supplier Device Package PG-TDSON-8-34 —
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes / Compliant
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

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