IAUCN04S7N009ATMA1 vs IAUCN04S7N006ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N009ATMA1 dari Infineon dan IAUCN04S7N006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N009ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (trench) |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | — |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 175 A |
| On-State Resistance (RDS(on)) | — | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Junction Temperature Max | — | 175 C |
| Power Dissipation Max (Pd) | — | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | — | [DATA_NEEDED: Qg total] |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes (compliant) |