IAUCN04S7N037GATMA1 vs IAUCN04S7L005ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N037GATMA1 dari Infineon dan IAUCN04S7L005ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N037GATMA1 IAUCN04S7L005ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Paket SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-43 (TDSON-8)
Tipe Mounting Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Rentang Suhu Kerja [DATA_NEEDED: junction/ambient temperature limits] -55°C to +175°C (Tj)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Jumlah Pin — 8
Lead-Free — Yes

Spek dan Sumber

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