IAUCN04S7N037GATMA1 vs IAUCN04S7L005ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N037GATMA1 disebabkan oleh Infineon dan IAUCN04S7L005ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N037GATMA1 IAUCN04S7L005ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Kemasan SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-43 (TDSON-8)
Jenis Pemasangan Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Gambaran Suhu Operasi [DATA_NEEDED: junction/ambient temperature limits] -55°C to +175°C (Tj)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Kiraan Pin — 8
Lead-Free — Yes

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