IAUCN04S7N037GATMA1 vs IAUCN04S7L009ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N037GATMA1 dari Infineon dan IAUCN04S7L009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N037GATMA1 IAUCN04S7L009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Paket SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-34 (TDSON EP)
Tipe Mounting Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] 1
Rentang Suhu Kerja [DATA_NEEDED: junction/ambient temperature limits] -55 °C to +175 °C (Tj)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Part Number — IAUCN04S7L009ATMA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

Spek dan Sumber

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