IAUCN04S7N037GATMA1 vs IAUCN04S7L014ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N037GATMA1 dari Infineon dan IAUCN04S7L014ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N037GATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 5 40V Automotive |
| Technology | Trench MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Paket | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Tipe Mounting | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Rentang Suhu Kerja | [DATA_NEEDED: junction/ambient temperature limits] | -55°C to +175°C (typical automotive MOSFET range) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| Tegangan Batas Gerbang | — | [DATA_NEEDED: Gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel MOSFET |