IAUCN04S7N037GATMA1 vs IAUCN04S7L014ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N037GATMA1 sa pamamagitan ng Infineon at IAUCN04S7L014ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ Nakahanda
Infineon
IAUCN04S7L014ATMA1 IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N037GATMA1 IAUCN04S7L014ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 5 40V Automotive
Technology Trench MOSFET, N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Packhaging SSO4G 5x6 mm² (PG-THSOG-4-1) PG-TDSON-8-34 (TDSON EP, 8-pin)
Uri ng Pagpapasok Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Hanay ng Temperature na Operasyon [DATA_NEEDED: junction/ambient temperature limits] -55°C to +175°C (typical automotive MOSFET range)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
FET Type — N-Channel
Continuous Drain Current (ID) — 120 A
On-Resistance RDS(on) Max — 1.43 mΩ
Threshold na Voltage ng Gate — [DATA_NEEDED: Gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: Total gate charge Qg]
Power Dissipation (Pd) — [DATA_NEEDED: Power dissipation Pd]
Qualification — AEC-Q101 (Automotive)
Configuration — Single N-Channel MOSFET

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