IAUCN08S7L033ATMA1 vs BSC005N03LS5IATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7L033ATMA1 dari Infineon dan BSC005N03LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN08S7L033ATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | — |
| Paket | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | — |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Status RoHS | Compliant | Compliant (per LCSC listing) |
| Level MSL | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL rating] |
| Part Number | — | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 42 A |
| Continuous Drain Current (ID) at Tc | — | 433 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | — | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | — | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 188 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |