IAUCN08S7L033ATMA1 vs IAUC100N10S5L054ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L033ATMA1 dari Infineon dan IAUC100N10S5L054ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L033ATMA1 IAUC100N10S5L054ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 OptiMOS 5 (IAUC automotive family)
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55°C to +175°C
Paket PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-34 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) AEC-Q101 (automotive)
Technology OptiMOS 7 trench MOSFET OptiMOS 5 trench
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020, typical for this package) [DATA_NEEDED: MSL rating]
Drain-to-Source Voltage (V_DS) — 100 V
Gate-to-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS value]
Continuous Drain Current (I_D, Tj) — 101 A
Power Dissipation (P_D, Tc) — 130 W
R_DS(on) max at V_GS=10V — 5.4 mΩ

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