IAUCN08S7L033ATMA1 vs IAUC100N10S5L054ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon at IAUC100N10S5L054ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaInfineon
IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon
IAUC100N10S5L054ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L033ATMA1 | IAUC100N10S5L054ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | OptiMOS 5 (IAUC automotive family) |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | -55°C to +175°C |
| Packhaging | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-34 (surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | AEC-Q101 (automotive) |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 trench |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL rating] |
| Drain-to-Source Voltage (V_DS) | — | 100 V |
| Gate-to-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS value] |
| Continuous Drain Current (I_D, Tj) | — | 101 A |
| Power Dissipation (P_D, Tc) | — | 130 W |
| R_DS(on) max at V_GS=10V | — | 5.4 mΩ |