IAUCN08S7L033ATMA1 vs IAUC100N10S5L054ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L033ATMA1 disebabkan oleh Infineon dan IAUC100N10S5L054ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN08S7L033ATMA1 IAUC100N10S5L054ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 OptiMOS 5 (IAUC automotive family)
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55°C to +175°C
Kemasan PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-34 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) AEC-Q101 (automotive)
Technology OptiMOS 7 trench MOSFET OptiMOS 5 trench
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, typical for this package) [DATA_NEEDED: MSL rating]
Drain-to-Source Voltage (V_DS) — 100 V
Gate-to-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS value]
Continuous Drain Current (I_D, Tj) — 101 A
Power Dissipation (P_D, Tc) — 130 W
R_DS(on) max at V_GS=10V — 5.4 mΩ

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