IAUCN08S7N034ATMA1 vs IAUCN04S7N006ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7N034ATMA1 dari Infineon dan IAUCN04S7N006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ AktifInfineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN08S7N034ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-43 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 175 A |
| On-State Resistance (RDS(on)) | — | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Technology | — | OptiMOS 5 (trench) |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Junction Temperature Max | — | 175 C |
| Power Dissipation Max (Pd) | — | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | — | [DATA_NEEDED: Qg total] |
| Lead-Free / RoHS | — | Yes (compliant) |