IAUCN08S7N034ATMA1 vs IAUCN04S7N006ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N034ATMA1 disebabkan oleh Infineon dan IAUCN04S7N006ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ AktifInfineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN08S7N034ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-43 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 175 A |
| On-State Resistance (RDS(on)) | — | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Technology | — | OptiMOS 5 (trench) |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Junction Temperature Max | — | 175 C |
| Power Dissipation Max (Pd) | — | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | — | [DATA_NEEDED: Qg total] |
| Lead-Free / RoHS | — | Yes (compliant) |