IAUCN08S7N036TATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N036TATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N036TATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Polarity N-Channel —
Drain-Source Voltage (V_DS) 80 V —
Gate-Source Voltage (V_GS) ±20 V —
Continuous Drain Current (I_D) 129 A —
R_DS(on) max @ V_GS=10V 3.60 mΩ —
Power Dissipation (P_D) 118 W (T_C = 25 °C) —
Input Capacitance (C_iss) 3120 pF (typ) —
Output Capacitance (C_oss) 1280 pF (typ) —
Reverse Transfer Capacitance (C_rss) 23 pF (max) —
Turn-on Delay Time (t_d(on)) 14 ns (typ) —
Rise Time (t_r) 8 ns (typ) —
Turn-off Delay Time (t_d(off)) 17 ns (typ) —
Fall Time (t_f) 8 ns (typ) —
Paket PG-LHDSO-10-1 (SSO10T, 5x7 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Cooling Top-side cooled —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET
Level MSL — 1 (per JEDEC J-STD-020, typical for this package)

Spek dan Sumber

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