IAUCN08S7N036TATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N036TATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N036TATMA1
IAUCN08S7N036TATMA1 - 80V, 3.6mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N036TATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Continuous Drain Current (I_D) | 129 A | β |
| R_DS(on) max @ V_GS=10V | 3.60 mΞ© | β |
| Power Dissipation (P_D) | 118 W (T_C = 25 Β°C) | β |
| Input Capacitance (C_iss) | 3120 pF (typ) | β |
| Output Capacitance (C_oss) | 1280 pF (typ) | β |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | β |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | β |
| Rise Time (t_r) | 8 ns (typ) | β |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | β |
| Fall Time (t_f) | 8 ns (typ) | β |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Cooling | Top-side cooled | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| Technology | β | OptiMOS 7 trench MOSFET |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for this package) |