IAUCN10S5L110TATMA1 vs IPB35N10S3L26ATMA2 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IPB35N10S3L26ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IPB35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS Power-Transistor
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tc — 35 A
Arus Kedip Pengecor — 180 A
Power Dissipation (Pd) at Tc — 71 W
RDS(on) (typical) — 26.3 mOhm
Rentang Suhu Kerja — -55C to +175C
Jumlah Pin — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Automotive Qualified — Yes (per Infineon product page classification)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon