IAUCN10S5L110TATMA1 vs IPB35N10S3L26ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IPB35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IPB35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS Power-Transistor
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tc — 35 A
Arus Alir Gesa — 180 A
Power Dissipation (Pd) at Tc — 71 W
RDS(on) (typical) — 26.3 mOhm
Gambaran Suhu Operasi — -55C to +175C
Bilangan Pin — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Automotive Qualified — Yes (per Infineon product page classification)

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