IAUS260N10S5N019TATMA1 vs IQDH29NE2LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IAUS260N10S5N019TATMA1 dari Infineon dan IQDH29NE2LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IAUS260N10S5N019TATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 260 A (Tj) | — |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) | — |
| Power Dissipation (Pd) | 300 W (Tc) | — |
| Paket | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-WHTFN-9-U02 (WHTFN EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 16 | 9 |
| Rentang Suhu Kerja | -55 C to +175 C (Tj) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 Power-Transistor |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |