IAUT300N08S5N012ATMA2 vs IAUCN10S7N021ATMA1 Perbandingan

Perbandingan bersamaan detil IAUT300N08S5N012ATMA2 dari Infineon dan IAUCN10S7N021ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUT300N08S5N012ATMA2 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™-5 80 V —
Tipe Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) [DATA_NEEDED: pulsed drain current IDM]
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
Paket PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL level] —
FET Type — N-Channel
Technology — OptiMOS™ 7 (trench MOSFET)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 175 A
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Suhu Hubung Kerja — -55 °C to +175 °C
Qualification — AEC-Q101 (Automotive)
Status RoHS — Compliant

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