IAUT300N08S5N012ATMA2 vs IAUCN10S7N021ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT300N08S5N012ATMA2 disebabkan oleh Infineon dan IAUCN10S7N021ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT300N08S5N012ATMA2 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™-5 80 V —
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) [DATA_NEEDED: pulsed drain current IDM]
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) —
Kemasan PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL level] —
FET Type — N-Channel
Technology — OptiMOS™ 7 (trench MOSFET)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 175 A
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Qualification — AEC-Q101 (Automotive)
Status RoHS — Compliant

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