IAUZ40N06S5L050ATMA1 vs BSC042NE7NS3GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ40N06S5L050ATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ40N06S5L050ATMA1 BSC042NE7NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TSDSON-8-33 (TSDSON-8) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 3
Automotive Qualification AEC-Q100 qualified —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSC042NE7NS3GATMA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at Ta — 19 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10V — 4.2 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) typ — 1.7 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 125 W
Rentang Suhu Kerja — -55C to +150C
Level MSL — 1

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