IAUZ40N06S5L050ATMA1 vs BSC042NE7NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5L050ATMA1 disebabkan oleh Infineon dan BSC042NE7NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N06S5L050ATMA1 BSC042NE7NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TSDSON-8-33 (TSDSON-8) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 3
Automotive Qualification AEC-Q100 qualified —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSC042NE7NS3GATMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at Ta — 19 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10V — 4.2 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) typ — 1.7 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 125 W
Gambaran Suhu Operasi — -55C to +150C
Aras MSL — 1

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