IAUZ40N06S5L050ATMA1 vs ISC011N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ40N06S5L050ATMA1 dari Infineon dan ISC011N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC011N03L5SATMA1 ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ40N06S5L050ATMA1 ISC011N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TSDSON-8-33 (TSDSON-8) PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 5 trench MOSFET
Automotive Qualification AEC-Q100 qualified —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 5 / StrongIRFET 30 V
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) @ Ta=25C — 37 A
Continuous Drain Current (ID) @ Tc=25C — 100 A
Power Dissipation (PD) @ Ta=25C — 2.5 W
Power Dissipation (PD) @ Tc=25C — 96 W
Suhu Kerja — -55 C to +175 C (TJ)
Gate Drive — Logic-level compatible
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon