IAUZ40N06S5L050ATMA1 vs ISC011N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5L050ATMA1 disebabkan oleh Infineon dan ISC011N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC011N03L5SATMA1 ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N06S5L050ATMA1 ISC011N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TSDSON-8-33 (TSDSON-8) PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 5 trench MOSFET
Automotive Qualification AEC-Q100 qualified —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 5 / StrongIRFET 30 V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) @ Ta=25C — 37 A
Continuous Drain Current (ID) @ Tc=25C — 100 A
Power Dissipation (PD) @ Ta=25C — 2.5 W
Power Dissipation (PD) @ Tc=25C — 96 W
Suhu Operasi — -55 C to +175 C (TJ)
Gate Drive — Logic-level compatible
Aras MSL — 1 (per JEDEC J-STD-020)

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